The system meets the testing requirements of MIL-STD-750D METHOD-1038.3, GJB128, and JEDEC standards. It is capable of conducting high-temperature reverse bias (HTRB) durability tests, high-temperature leakage current (HTIR) tests, and burn-in screening for discrete devices such as diodes, transistors, field-effect transistors, and thyristors in various packaging formats, including surface-mount technology (SMT).

Main features:

Test temperature range: room temperature to 150°C; voltage detection range: 0 to 2000V, resolution: 0.1V, accuracy: ±1+0.1V; leakage current detection range: 0 to 50mA, resolution: 0.1μA, accuracy: 1+1LSB