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China's first tandem high-energy hydrogen ion implanter successfully delivered its first beam

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Major breakthrough in domestic chip equipment: China Nuclear High Energy Ion Implanter has succeeded!

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  On January 17,2026,the China Institute of Atomic Energy under the China National Nuclear Corporation announced that China's first tandem high-energy hydrogen ion implanter(POWER-750H)successfully produced its first beam,with core indicators comparable to the international top level.This breakthrough has filled the"bottleneck"shortcoming in the power semiconductor manufacturing chain,directly reducing IGBT manufacturing costs by more than 30%.

  It is understood that ion implanters,along with lithography machines,etching machines,and thin film deposition equipment,are collectively referred to as the"four core equipment"in chip manufacturing,and are indispensable"rigid demand"equipment for semiconductor manufacturing.For a long time,China has relied entirely on imports for high-energy hydrogen ion implanters,which are difficult to develop and have high technical barriers,posing as one of the bottlenecks restricting the upgrading of China's strategic industries.

  Relying on its decades of technical accumulation in the field of nuclear physics accelerators,the China Institute of Atomic Energy(CIAE)has used tandem accelerator technology as a core means to solve a series of problems.It has mastered the forward design capability of tandem high-energy hydrogen ion implanters,from the underlying principles to the complete machine integration,breaking the technological blockade and long-term monopoly of foreign enterprises in this field.

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